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| (R) 2N5191 2N5192 MEDIUM POWER NPN SILICON TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N5191 and 2N5192 are silicon epitaxial-base NPN transistors in Jedec SOT-32 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP type of 2N5192 is 2N5195. 1 3 2 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter 2N5191 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 C Storage Temperature Max. Operating Junction Temperature o Value 2N5192 80 80 5 4 7 1 40 -65 to 150 150 60 60 Unit Unit V V V A A A W o o C C 1/4 December 2000 2N5191 / 2N5192 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I CEX I CEO I EBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO V CE = rated V CEO V CE = rated V CEO V CE = rated V CEO V EB = 5 V I C = 100 mA for 2N5191 for 2N5192 I C = 1.5 A IC = 4 A I C = 1.5 A I B = 0.15 A IB = 1 A V CE = 2 V 25 20 10 7 2 MHz Min. Typ. Max. 0.1 0.1 2 1 1 Unit mA mA mA mA mA T c = 125 o C V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain 60 80 0.6 1.4 1.2 100 80 V V V V V I C = 1.5 A V CE = 2 V for 2N5191 for 2N5192 IC = 4 A V CE = 2 V for 2N5191 for 2N5192 IC = 1 A V CE = 10 V fT Transition frequency Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 2N5191 / 2N5192 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H 3 4.15 3.8 3.2 2.54 0.118 7.4 10.5 0.7 0.49 2.4 1.0 15.4 2.2 4.65 0.163 0.150 0.126 0.100 TYP. MAX. 7.8 10.8 0.9 0.75 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.019 0.040 0.039 0.606 0.087 0.183 inch TYP. MAX. 0.307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 c1 0016114 3/4 2N5191 / 2N5192 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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